Quaternary alloy InxGa1−xAsyP1−y/InP photodetectors
- 1 May 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (9) , 549-551
- https://doi.org/10.1063/1.90125
Abstract
Acceptor‐doped heteroepitaxial In0.84Ga0.16As0.34P0.66 layers grown on donor‐doped InP substrates were used to construct self‐filtering infrared detectors with a responsivity of 0.46 A/W at a wavelength λ=1.05 μm and a corresponding external quantum efficiency ηx=0.54.Keywords
This publication has 3 references indexed in Scilit:
- InxGa1−xAsyP1−y/InP heterojunction photodiodesApplied Physics Letters, 1977
- Growth and characterization of InGaAsP–InP lattice-matched heterojunctionsJournal of Vacuum Science and Technology, 1976
- Indium PhosphideJournal of the Electrochemical Society, 1973