Electronic Properties of Amorphous Semiconductors. Lattice Topology Effects
- 1 May 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 141 (1) , 163-171
- https://doi.org/10.1002/pssb.2221410114
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Topological disorder an amorphous semiconductors: a real-space renormalisation for Husimi cacti alloysJournal of Physics C: Solid State Physics, 1984
- Theory of Brillouin scattering from an isotropic elastic filmJournal of Physics C: Solid State Physics, 1984
- Local density of states in a disordered chain: A renormalization group approachSolid State Communications, 1981
- Photoemission studies on in situ prepared hydrogenated amorphous silicon filmsPhilosophical Magazine Part B, 1979
- Electronic energy structure of amorphous siliconPhysical Review B, 1976
- Cluster-type calculations of electronic structures of crystals by the method of linear combinations of atomic orbitalsThe Journal of Chemical Physics, 1975
- One-band density of states for some models for amorphous semiconductorsJournal of Physics C: Solid State Physics, 1975
- "Cluster-Bethe-lattice" method: Electronic density of states of amorphous and crystalline homopolar solidsPhysical Review B, 1974
- Relaxed continuous random network modelsJournal of Non-Crystalline Solids, 1974
- Tetrahedrally Coordinated Random-Network StructurePhysical Review Letters, 1973