One-band density of states for some models for amorphous semiconductors
- 7 November 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (21) , L468-L472
- https://doi.org/10.1088/0022-3719/8/21/012
Abstract
The authors use the equation-of-motion method to obtain directly the one-band density of states, projected on interior atoms, for three approximately 500-unit continuous random network models for amorphous group IV semiconductors and one 533-atom continuous random network model for amorphous arsenic. The presence of a sharp peak in the lower part of the band and the retreat of the lower band-edge are correlated with the concentration of five-membered rings of bonds.Keywords
This publication has 13 references indexed in Scilit:
- Spin waves in a random two-dimensional antiferromagnetJournal of Physics C: Solid State Physics, 1975
- One-band density of states for various fourfold-coordinated random networks with periodic boundary conditionsPhysical Review B, 1975
- Systematic generation of random networksJournal of Non-Crystalline Solids, 1974
- A continuous random network model with three-fold coordinationPhilosophical Magazine, 1974
- One-band density of states for the Polk model for amorphous tetrahedrally bonded semiconductorsJournal of Physics C: Solid State Physics, 1973
- Tetrahedrally Coordinated Random-Network StructurePhysical Review Letters, 1973
- Multiple Scattering Theory and Pseudogaps in Amorphous Covalent SemiconductorsPhysica Status Solidi (b), 1973
- Electronic structure based on the local atomic environment for tight-binding bandsJournal of Physics C: Solid State Physics, 1972
- The Band Structure of Si III and Ge IIIPhysica Status Solidi (b), 1972
- LCAO Energies and Wave Functions in a Covalent Semiconductor with Topological DisorderPhysica Status Solidi (b), 1972