Optimization of measurement parameters in Doppler broadening spectroscopy
- 1 June 2002
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 194 (1-4) , 255-259
- https://doi.org/10.1016/s0169-4332(02)00127-7
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopyPhysical Review B, 2000
- Slow and fast positron studies of defects created in silicon by swift Kr ionsApplied Surface Science, 1999
- Comparison of experimental and theoretical Doppler broadening line-shape parametersApplied Surface Science, 1999
- Positron Annihilation in SemiconductorsPublished by Springer Nature ,1999
- Momentum distributions of electron-positron pairs annihilating at vacancy clusters in SiPhysical Review B, 1998
- Characterization of vacancy-like defects in boron-implanted silicon with slow positronsApplied Surface Science, 1997
- Positron line-shape parameters and lifetimes for semiconductors: Systematics and temperature effectsPhysical Review B, 1997
- Defect formation in H implantation of crystalline SiPhysical Review B, 1988
- LOCALIZED MODES AND DIVACANCY ABSORPTION IN OXYGEN ION IMPLANTED SiApplied Physics Letters, 1970
- DEPTH DISTRIBUTION OF DIVACANCIES IN 400-keV O+ ION-IMPLANTED SILICONApplied Physics Letters, 1970