Cluster calculations for tetrahedrally bonded amorphous semiconductors
- 31 December 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (10) , 957-960
- https://doi.org/10.1016/0038-1098(76)90482-8
Abstract
No abstract availableFunding Information
- National Research Council Canada
This publication has 18 references indexed in Scilit:
- Anisotropy of structural models for amorphous materialsPhysical Review B, 1976
- Atomic densities of states near Si (111) surfacesPhysical Review B, 1976
- Electronic Energy Structure of Amorphous Silicon by the Linear Combination of Atomic Orbitals MethodPhysical Review Letters, 1975
- Electrons and phonons in amorphous semiconductorsPhysica Status Solidi (b), 1975
- Intrinsic (111) surface states of Ge, GaAs, and ZnSePhysical Review B, 1975
- "Cluster-Bethe-lattice" method: Electronic density of states of amorphous and crystalline homopolar solidsPhysical Review B, 1974
- Density of states in crystalline and amorphous germaniumPhysical Review B, 1974
- Many-Electron Effects for Deep Levels in Solids: The Lattice Vacancy in DiamondPhysical Review Letters, 1974
- Electronic Properties of Complex Crystalline and Amorphous Phases of Ge and Si. II. Band Structure and Optical PropertiesPhysical Review B, 1973
- Inhomogeneous Electron GasPhysical Review B, 1964