Intrinsic (111) surface states of Ge, GaAs, and ZnSe
- 15 January 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 11 (2) , 732-737
- https://doi.org/10.1103/physrevb.11.732
Abstract
The intrinsic (111) surface states of Ge, GaAs, and ZnSe are studied using the tight-binding method. The local density of states of atoms on different layers are calculated and the various types of surface states are discussed. The effects of relaxation on the surface states are examined for Ge.Keywords
This publication has 8 references indexed in Scilit:
- New surface states of an unrelaxed (110) surfacePhysics Letters A, 1974
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Tight-binding calculations of surface states of Si(111)Solid State Communications, 1974
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Investigation of surface states on the polar (111) and () faces of GaAs by photoelectron spectroscopySolid State Communications, 1973
- Surface States and Surface Bonds of Si(111)Physical Review Letters, 1973
- Surface-State Transitions of Silicon in Electron Energy-Loss SpectraPhysical Review Letters, 1973
- Intrinsic Surface States in Semiconductors. I. Diamond-Type CrystalsJournal of the Physics Society Japan, 1969