Metal–Germanium–Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers
- 19 February 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 16 (2) , 581-583
- https://doi.org/10.1109/lpt.2003.822258
Abstract
We report a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate. Amorphous Ge was used to increase the Schottky barrier height, which resulted in a reduction of the dark current by more than two orders of magnitude. The dark current measured on a photodetector having 1 μm finger width and 2 μm spacing with 25×50 μm 2 active area was 7.5 μA at 3 V. At the wavelength of 1.3 μm, the external quantum efficiency was 14.3% (0.15 A/W) without an antireflecting coating. At reverse biases of 1, 2, 3, and 4 V, the 3-dB bandwidth was found to be 1.5, 2.8, 3.1, and 4.3 GHz, respectively.Keywords
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