Deep-level transient spectroscopy study of a thermal conversion layer on semi-insulating GaAs grown by the liquid-encapsulated Czochralski method
- 15 September 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (6) , 2184-2186
- https://doi.org/10.1063/1.337174
Abstract
A thermal conversion mechanism of semi-insulating GaAs with a SiOxNy cap was studied. Both SiO- and SiN-rich cap films exhibit n-type conductivity after thermal annealing, and a newly discovered level Ec−0.91 eV is present in these converted samples found by deep-level transient spectroscopy measurements. This conversion phenomenon may be attributed to Ga out-diffusion through the cap layer during thermal annealing.This publication has 11 references indexed in Scilit:
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