Molecular beam epitaxy of In0.23Ga0.77Sb Grown on GaAs and GaSb substrates and the fabrication of planar In0.23Ga0.77Sb transferred electron devices
- 16 December 1993
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 140 (2) , 481-490
- https://doi.org/10.1002/pssa.2211400219
Abstract
No abstract availableKeywords
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