Radiation Damage Of Carrier Life Time in P Type Si
- 1 December 1965
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 20 (12) , 2140-2146
- https://doi.org/10.1143/jpsj.20.2140
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Hall Effect Measurement of Radiation Effect on P-Type SiliconJapanese Journal of Applied Physics, 1965
- Effects of Dosage and Impurities on Radiation Damage of Carrier Life Time in SiJournal of the Physics Society Japan, 1964
- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963
- Electron paramagnetic resonance of defects in irradiated siliconDiscussions of the Faraday Society, 1961
- Recombination Properties of Bombardment Defects in SemiconductorsJournal of Applied Physics, 1959
- Theoretical Treatment of the Kinetics of Diffusion-Limited ReactionsPhysical Review B, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952