Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1A) , L35
- https://doi.org/10.1143/jjap.33.l35
Abstract
A large optically induced absorption change was observed in porous silicon. The relative intensity change of the transmitted beam is on the order of 50%. Using this phenomenon, we have demonstrated all-optical logic gates such as inverters or NOR functions. These results point to the possibility of fabricating all-optical integrated circuits on a Si substrate.Keywords
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