Scanning probe microscopy of ion-irradiated materials
- 1 May 1999
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 151 (1-4) , 42-55
- https://doi.org/10.1016/s0168-583x(99)00136-6
Abstract
No abstract availableKeywords
This publication has 87 references indexed in Scilit:
- Track separation due to dissociation of MeV C60 inside a solidNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- Use of atomic-force microscopy and of a parallel irradiation geometry for in-depth characterization of damage produced by swift Kr ions in siliconPhysical Review B, 1996
- Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfacesPhysical Review B, 1992
- Scanning tunneling microscopy of defects induced by carbon bombardment on graphite surfacesSurface Science, 1990
- Scanning tunneling microscopy study of single-ion impacts on graphite surfaceNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Scanning tunneling microscopy of ion impacts on semiconductor surfacesJournal of Vacuum Science & Technology A, 1989
- Scanning tunneling microscopy of an ion-bombarded PbS(001) surfaceApplied Physics Letters, 1988
- Effects of isolated atomic collision cascades on/Si interfaces studied by scanning tunneling microscopyPhysical Review B, 1988
- Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopyApplied Physics Letters, 1985
- Summary Abstract: Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopyJournal of Vacuum Science & Technology B, 1985