Comment on ‘‘Quantitative structural determination of metallic film growth on a semiconductor crystal: (√3 × √3 )R30°→(1×1) Pb on Ge(111)’’
- 5 March 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (10) , 1182
- https://doi.org/10.1103/physrevlett.64.1182
Abstract
A Comment on the Letter by H. Huang et al., Phys. Rev. Lett. 62, 559 (1989).Keywords
This publication has 3 references indexed in Scilit:
- Quantitative Structural Determination of Metallic Film Growth on a Semiconductor Crystal:Pb on Ge(111)Physical Review Letters, 1989
- High-Temperature X-Ray Standing-Wave Study: Application to Melting of Monolayers of Pb on Ge(111) SurfacesEurophysics Letters, 1988
- Ge(111) : The atomic geometrySurface Science, 1986