Amorphes Silizium (a‐Si)
- 1 January 1985
- journal article
- research article
- Published by Wiley in Physik in unserer Zeit
- Vol. 16 (2) , 50-62
- https://doi.org/10.1002/piuz.19850160204
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- Study of Gap States in a-Si:H by Transient Current SpectroscopyPublished by Springer Nature ,1982
- Detailed calculation of the density of gap states obtained by DLTS measurements of doped a–Si:H Schottky barrier diodesAIP Conference Proceedings, 1981
- Characterization of the protonic distribution and environment in amorphous silicon-hydrogen alloys using proton NMR and ESRAIP Conference Proceedings, 1981
- Amorphous-Semiconductor DevicesScientific American, 1977
- Amorphous semiconductorsPhysics Today, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976