The conduction band structure of InP from a high pressure experiment
- 1 July 1970
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 8 (14) , 1119-1123
- https://doi.org/10.1016/0038-1098(70)90009-8
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The X1c conduction band minimum in high purity epitaxial n-type GaAsSolid State Communications, 1970
- Hall effect measurements on single crystals at pressures extending to 70 kbJournal of Physics E: Scientific Instruments, 1968
- Effects of High Pressure, Uniaxial Stress, and Temperature on the Electrical Resistivity ofPhysical Review B, 1967
- Mechanism of the Gunn Effect from a Pressure ExperimentPhysical Review Letters, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Interband Scattering in-Type GermaniumPhysical Review B, 1961
- Optical Properties of-Type InPPhysical Review B, 1958