Molybdenum Film Formation by Low Pressure Chemical Vapor Deposition
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10A) , L615-617
- https://doi.org/10.1143/jjap.22.l615
Abstract
A new low pressure chemical vapor deposition apparatus for molybdenum film formation by the hydrogen reduction of molybdenum pentachloride is developed. The apparatus realizes the uniformity of film thickness within ±5% for 25 wafers per batch and molybdenum film formation without oxidation. It is found that the deposition rate is controlled by surface reaction up to a higher temperature than that under atmospheric pressure and is proportional to the 3/2 power of hydrogen partial pressure in the region of surface reaction.Keywords
This publication has 2 references indexed in Scilit:
- Characterization of CVD Molybdenum Thin FilmsJournal of the Electrochemical Society, 1971
- Chemical Deposition of Mo on SiJapanese Journal of Applied Physics, 1968