Chemical Deposition of Mo on Si
- 1 September 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (9) , 1028-1038
- https://doi.org/10.1143/jjap.7.1028
Abstract
A good Schottky diode has been obtained by the chemical deposition of Mo on Si. Thermodynamical consideration denotes that the deposition rate of Mo is determined by solid MoCl3 produced as the intermediate product of H2 reduction of MoCl5. If the deposition temperature is above 600°C theoretical deposition rates agree with experimental results. Mo deposited on Si at 500∼800°C has the structure of fiber texture oriented to (100). Above 900°C, MoSi2 is detected by electron diffraction analysis. Between 600 and 800°C, the Mo film of thickness 1000 Å has the resistivity which is very close to its bulk resistivity. By the deposition for 30 min. at 560°C, a good Mo-Si Schottky diode with the same barrier height as previously reported, is obtained. At 600°C, the deposition time must be within 15 min. to get a good Schottky diode. But the barrier height is about 20% higher than that of a diode, fabricated at 560°C.Keywords
This publication has 5 references indexed in Scilit:
- Chemical Vapor Deposition of Mo onto SiJournal of the Electrochemical Society, 1967
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Molybdenum-Silicon Schottky BarrierJournal of Applied Physics, 1966
- Growth of Vanadium on Silicon SubstratesJournal of the Electrochemical Society, 1966
- Emissivity at 0.65 Micron of Silicon and Germanium at High TemperaturesJournal of Applied Physics, 1957