Molybdenum-Silicon Schottky Barrier
- 1 July 1966
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (8) , 2985-2987
- https://doi.org/10.1063/1.1703151
Abstract
An ideal metal-semiconductor Schottky barrier contact was made by chemically depositing thin films of molybdenum on n-type silicon by the hydrogen reduction of molybdenum pentachloride at temperatures between 390°C and 500°C. Current-voltage, capacity-voltage, and photoelectric measurements were used to investigate the characteristics of molybdenum-silicon diodes thus produced. The junction is shown to be very close to the ideal Schottky barrier with the barrier height measured with respect to the Fermi energy of 0.57±0.02 eV.This publication has 9 references indexed in Scilit:
- Surface-State and Interface Effects in Schottky Barriers at n-Type Silicon SurfacesJournal of Applied Physics, 1965
- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965
- Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky BarriersJournal of Applied Physics, 1964
- Gold-Epitaxial Silicon High-Frequency DiodesBell System Technical Journal, 1964
- Conduction properties of the Au-n-type—Si Schottky barrierSolid-State Electronics, 1963
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963
- Method for measuring impurity distributions in semiconductor crystalsProceedings of the IEEE, 1963
- Attenuation Length Measurements of Hot Electrons in Metal FilmsPhysical Review B, 1962
- Contact Potential Difference Measurements by the Kelvin MethodProceedings of the Physical Society. Section B, 1957