Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (3) , 579-583
- https://doi.org/10.1109/16.75169
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- New effects of trench isolated transistor using side-wall gatesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Gate electrode RC delay effects in VLSI'sIEEE Transactions on Electron Devices, 1985