Silicide formation and interdiffusion effects in Si-Ta, SiO2-Ta AND Si-PtSi-Ta thin film structures
- 1 February 1976
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 5 (1) , 1-12
- https://doi.org/10.1007/bf02652882
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Reactions Between the Ta‐Pt‐Ta‐Au Metallization and PtSi Ohmic ContactsJournal of the Electrochemical Society, 1975
- Sem, auger spectroscopy and ion backscattering techniques applied to analyses of Au/refractory metallizationsJournal of Electronic Materials, 1975
- A stabilized tantalum diffusion barrier for the gold metallization systemJournal of Electronic Materials, 1974
- Analysis of thin-film structures with nuclear backscattering and x-ray diffractionJournal of Vacuum Science and Technology, 1974
- Reliability of Gold∕Stabilized Tantalum Metallizations for Microwave Power TransistorsJournal of the Electrochemical Society, 1974
- Electrical Characteristics and Thermal Stability of Platinum Silicide-to-Silicon Ohmic Contacts Metalized with TungstenJournal of the Electrochemical Society, 1973
- Silicide Formation in Tungsten and Other Refractory Metalizations on PtSi on SiliconJournal of the Electrochemical Society, 1973
- Thermal stability of thin PtSi films on silicon substratesJournal of Applied Physics, 1972
- Use of Auger Electron Spectroscopy and Inert Gas Sputtering for Obtaining Chemical ProfilesJournal of Vacuum Science and Technology, 1972
- Seeman–Bohlin X-ray diffractometer for thin filmsJournal of Applied Crystallography, 1970