Electron traps in silicon doped by neutron transmutation
- 1 October 1978
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 11 (14) , 2043-2057
- https://doi.org/10.1088/0022-3727/11/14/014
Abstract
Silicon doped by neutron transmutation to phosphorus levels of (1-2.5)*1014 atoms cm-3 was studied with deep-level transient spectroscopy on evaporated surface barrier diodes. Seven bulk and two surface-related trap levels were identified after 30 min anneals in N2 in the range 425-750 degrees C, and in material with residual impurities 16 cm-3. After anneals at 700 degrees C the dominating electron trap was located at approximately 0.20 eV below the conduction band. The corresponding defect is proposed to consist of interstitial carbon and interstitial silicon atoms. A model for the defect reconfirmed the relationship reported between final resistivity after transmutation doping and minority carrier lifetimes.Keywords
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