1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

Preprint

6 March 2010

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.1003.1373

Abstract

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f^y power spectrum noise with 1< y 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with (\partial I/\partial V)^2 . A model is proposed showing qualitative agreements with our experimental data.

Keywords

TUNNEL CURRENT NOISE
POWER SPECTRUM
QUALITATIVE
SPECTRUM
BIAS

All Related Versions

Version 1, 2010-03-06, ArXiv
Version 1, 2007-01-19, ArXiv (Unconfirmed version)
Version 2, 2007-05-10, ArXiv (Unconfirmed version)
Version 3, 2007-09-29, ArXiv (Unconfirmed version)
Published version: Physical Review B, 76 (20).

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