GaN Materials for High Power Microwave Amplifiers
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 2 references indexed in Scilit:
- Scattering of electrons at threading dislocations in GaNJournal of Applied Physics, 1998
- Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistorsApplied Physics Letters, 1998