First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies
- 1 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 256-259
- https://doi.org/10.1016/s0022-0248(98)01333-5
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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