Defect control during growth of highly mismatched (100) InAsGaAs-heterostructures
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4) , 368-373
- https://doi.org/10.1016/0022-0248(94)00535-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Interplay between Surface Stabilization, Growth Mode and Strain Relaxation during Molecular-Beam Epitaxy of Highly Mismatched III-V Semiconductor LayersEurophysics Letters, 1994
- Strain relaxation by edge dislocations in GaAs/GaAlAs double heterostructuresPhilosophical Magazine A, 1994
- Interplay between Surface Stabilization, Growth Mode and Strain Relaxation during Molecular-Beam Epitaxy of Highly Mismatched III-V Semiconductor LayersEurophysics Letters, 1994
- Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxyJournal of Applied Physics, 1993
- Reflection high-energy electron diffraction and optical measurements on the molecular-beam epitaxial growth of one and two monolayers of InAs on GaAsJournal of Applied Physics, 1992
- Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)SiJournal of Materials Research, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Nucleation of misfit dislocations in strained-layer epitaxy in the GexSi1−x/Si systemJournal of Vacuum Science & Technology A, 1989
- Generation of misfit dislocations in semiconductorsJournal of Applied Physics, 1987
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985