a-Si:H Thin-Film Transistors on Rollable 25-µ;m Thick Steel Foil

1 January 1998

journal article
Published by Springer Nature in MRS Proceedings

Vol. 508
https://doi.org/10.1557/proc-508-13

Abstract

We report the first amorphous silicon thin film transistors (TFTs) on flexible, ultra-thin substrates of 25 µm thick stainless steel foil. The transistors remain operational under convex or concave bending down to 2.5 mm radius of curvature. Taking advantage of the flexibility and resiliency of these devices, we have successfully fabricated TFTs using only xerographic toner masks printed directly on to the steel substrate and using mechanical alignment in the laser printer to obtain the necessary overlay accuracy. The goal of our work is to develop a foldable active-matrix transistor backplane, at low cost and high throughput, for use in highly rugged and portable applications such as foldable intelligent maps. Our results suggest that such foldable backplane circuits are feasible.

Keywords

THIN FILM TRANSISTOR

This publication has 3 references indexed in Scilit:

a-Si:H TFTs Made on Polyimide Foil by PE-CVD at 150°C
MRS Proceedings, 1998
Electrographically patterned thin-film silicon transistors
IEEE Electron Device Letters, 1996
Mechanics of Materials
Published by Springer Nature ,1991