Selective etching of Si relative to SiO2 without undercutting by CBrF3 plasma
- 1 May 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (9) , 768-770
- https://doi.org/10.1063/1.91651
Abstract
Etching characteristics with selectivity similar to conventional CF4 plasma etching but without undercutting are realized by plasma‐reactive sputter etching, based on the reactivity of the incident ions combining fluorocarbons with low reactive halogens. In particular, the method with CBrF3 is practically useful for selective etching of Si, poly‐Si, and Mo relative to SiO2 in high‐accuracy pattern transfer.Keywords
This publication has 5 references indexed in Scilit:
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