Highly sensitive NpnP optoelectronic switch by AlAs regrowth
- 29 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (5) , 497-498
- https://doi.org/10.1063/1.105418
Abstract
A double‐heterostructure NpnP optoelectronic switching device, with an extreme optical sensitivity and low holding power, has been fabricated. A decrease in breakover voltage of 650 mV is obtained at a light illumination of only 5 nW for a 50×50 μm2 device. To achieve this high sensitivity, the surface generation/recombination currents at the edges of the devices have been reduced by passivating the device perimeter with a regrowth of 50 nm AlAs (lowly p doped).Keywords
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