Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV
- 15 March 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 72 (2-3) , 150-155
- https://doi.org/10.1016/s0921-5107(99)00493-6
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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