Microstructure of SIMOX buried oxide, mechanisms of defect formation and related reliability issues

This publication has 42 references indexed in Scilit:

• Hot-carrier effects in fully depleted submicrometer NMOS/SIMOX as influenced by back interface degradation
  IEEE Electron Device Letters, 1992
• Hot carrier-induced degradation mechanisms in short-channel SIMOX p-MOSFET's
  Microelectronic Engineering, 1992
• Electron spin resonance of separation by implanted oxygen oxides: Evidence for structural change and a deep electron trap
  Applied Physics Letters, 1992
• Electron trapping in SiO/sub 2/ formed by oxygen implantation
  IEEE Electron Device Letters, 1992
• A Review of the Electrical Properties of SIMOX Substrates and Their Impact on Device Performance
  Journal of the Electrochemical Society, 1991
• Electron trapping in irradiated SIMOX buried oxides
  IEEE Electron Device Letters, 1991
• Optimization of SIMOX for VLSI by electrical characterization
  IEEE Transactions on Electron Devices, 1991
• Time-dependent hole and electron trapping effects in SIMOX buried oxides
  IEEE Transactions on Nuclear Science, 1990
• The nature of the trapped hole annealing process
  IEEE Transactions on Nuclear Science, 1989
• Nature of the E′ deep hole trap in metal-oxide-semiconductor oxides
  Applied Physics Letters, 1987