Time-dependent hole and electron trapping effects in SIMOX buried oxides
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 1982-1989
- https://doi.org/10.1109/23.101218
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS DevicesIEEE Transactions on Nuclear Science, 1987
- The Relationship between 60Co and 10-keV X-Ray Damage in MOS DevicesIEEE Transactions on Nuclear Science, 1986
- Hole Transport and Trapping in Field OxidesIEEE Transactions on Nuclear Science, 1985
- Photon Energy Dependence of Radiation Effects in MOS StructuresIEEE Transactions on Nuclear Science, 1980
- ELECTRON TRANSPORT IN SiO2 FILMS AT LOW TEMPERATURESPublished by Elsevier ,1980
- Enhanced Flatband Voltage Recovery in Hardened Thin MOS CapacitorsIEEE Transactions on Nuclear Science, 1978
- The multiple-trapping model and hole transport in SiO2Journal of Applied Physics, 1977
- Radiation-Induced Charge Transport and Charge Buildup in SiO2 Films at Low TemperaturesIEEE Transactions on Nuclear Science, 1976
- Hole Transport in MOS OxidesIEEE Transactions on Nuclear Science, 1975
- Short-Term Charge Annealing in Electron-Irradiated Silicon DioxideIEEE Transactions on Nuclear Science, 1971