Hot carrier-induced degradation mechanisms in short-channel SIMOX p-MOSFET's
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1) , 473-476
- https://doi.org/10.1016/0167-9317(92)90477-9
Abstract
No abstract availableKeywords
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- From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomenaIEEE Transactions on Nuclear Science, 1988