Evaluation of pulsed radiation effects in buried oxides by fast C-V measurements

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Abstract
Fast C‐V measurement techniques are utilized to simultaneously probe both upper and lower interfaces of silicon‐on‐insulator/separation by implantation of oxygen buried oxide capacitors following exposure to pulsed ionizing irradiation. In addition to the relatively stable radiation‐induced positive charge, reverse annealing is observed from both Si‐SiO2 interfaces over the 200 μs to 300 s post exposure interval; this behavior is consistent with electron detrapping within the oxide. The dependence of electron detrapping on dc annealing bias is attributed to field‐enhanced emission effects.