Radiation-induced charge trapping in implanted buried oxides

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Abstract
We investigate the response of buried oxide layers formed by oxygen implantation to total dose x‐ray irradiation. The characterization is based on C‐V measurements of the buried oxide capacitor and on back‐channel transistor measurements. Reduced charge trapping is found for material implanted with a lower oxygen dose, annealed at higher temperatures, and annealed for longer times. Also, total‐dose irradiation was found to generate few interface traps. A particularly interesting result is that an increase in the concentration of shallow donors with x‐ray dose was observed for certain samples. This increase in the donor concentration was observed only in the top Si film.