From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1355-1360
- https://doi.org/10.1109/23.25464
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The effect of 1300-1380 degrees C anneal temperatures and material contamination on the characteristics of CMOS/SIMOX devicesIEEE Electron Device Letters, 1988
- An experimental facility for the study of effects of heavy ion irradiation on logic microcircuitsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Radiation-Tolerant, Sidewall-Hardened SOI/MOS TransistorsIEEE Transactions on Nuclear Science, 1987
- Transient Radiation Effects in SOI Static RAM CellsIEEE Transactions on Nuclear Science, 1987
- New conditions for synthesizing SOI structures by high dose oxygen implantationJournal of Crystal Growth, 1985
- Transient Radiation Effects in SOI MemoriesIEEE Transactions on Nuclear Science, 1985