Transient Radiation Effects in SOI Memories
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 4431-4437
- https://doi.org/10.1109/tns.1985.4334137
Abstract
This paper presents the first measurements of transient radiation effects on SOI discrete devices and an LSI memory. A commercially processed LSI SOI memory, a 4K × 1 SRAM on SIMOX, was tested for SEU, and transient ionizing radiation effects as a function of bias conditions and dose rate. The SEU error rate was found to be between 1.5 and 2.5 × 10-8 errors/bit-day for the 10% worst-case orbit model. The output voltage logic upset level was greater than 1.6 × 1010 rad(Si)/sec for Vcc supply voltage variations of -10% and +20% with Vsub at -10 V. For the discrete devices and memory, the measured transient photocurrents were larger than the calculated volumetric photocurrent generated in the active device region. This increased transient response is postulated to be due to the gain of the parasitic phototransistor of the dielectrically isolated MOS device.Keywords
This publication has 12 references indexed in Scilit:
- Effects of ionizing radiation on SOI/CMOS Devices fabricated in zone-melting-recrystallized Si films on SiO2IEEE Electron Device Letters, 1984
- Prompt and Total Dose Response of Hard 4k and 16k CMOS Static Random Access Memories (SRAMs)IEEE Transactions on Nuclear Science, 1984
- Heavy Ion-Induced Single Event Upsets of Microcircuits; A Summary of the Aerospace Corporation Test DataIEEE Transactions on Nuclear Science, 1984
- Carrier lifetimes in silicon epitaxial layers deposited on oxygen-implanted substratesElectronics Letters, 1983
- Suggested Single Event Upset Figure of MeritIEEE Transactions on Nuclear Science, 1983
- Effects of ionizing radiation on n-channel MOSFET's fabricated in zone-melting-recrystallized Si films on SiO2IEEE Electron Device Letters, 1982
- Transient Radiation Response of Hardened CMOS/SOS Microprocessor and Memory DevicesIEEE Transactions on Nuclear Science, 1980
- Transient and total dose radiation characteristics of an SOS LSI arrayIEEE Transactions on Electron Devices, 1978
- Siucon-on-sapphire device photoconduction predictionsIEEE Transactions on Nuclear Science, 1974
- Transient Photocurrents in SOS StructuresIEEE Transactions on Nuclear Science, 1973