A general solution of the quantization in a semiconductor surface inversion layer in the electric quantum limit
- 24 April 1972
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 39 (2) , 101-102
- https://doi.org/10.1016/0375-9601(72)91034-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistorSolid-State Electronics, 1970
- Iteration methods for calculating self-consistent fields in semiconductor inversion layersJournal of Computational Physics, 1970
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967