Reversal in the order of impurity binding energies with atomic energies
- 15 January 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (2) , 1420-1423
- https://doi.org/10.1103/physrevb.27.1420
Abstract
Whereas atomistic models predict that binding energies of donor levels in semiconductors increase with the ionization potential of the free impurity atoms, we find that a special enhancement of the screening in the solid predicts, for chalcogen impurities in silicon, a reversal in this order.Keywords
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