Optically detected magnetic resonance of nonradiative recombination via theAsGaantisite inp-type GaAs

Optically detected magnetic resonance of the ${\mathrm{As}}_{\mathrm{Ga}}$ antisite detected via photoluminescence is reported for the first time in p-type GaAs. The signals are observed as negative contributions to all photoluminescence bands down to 1.6 μm in p-type Zn-doped GaAs. The resonance spectrum is attributed to nonradiative recombination between the singly ionized ${\mathrm{As}}_{\mathrm{Ga}{\mathrm{}}^{+}({\mathrm{D}}^{+}}$) donor and shallow acceptors. The results suggest that the ${\mathrm{As}}_{\mathrm{Ga}}$ antisite provides an efficient nonradiative recombination channel in GaAs and underline the important role of antisite defects in nonradiative processes in III-V compound semiconductors.