Optically detected magnetic resonance of the AsGaantisite via luminescence in GaAs
- 10 April 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (10) , L269-L273
- https://doi.org/10.1088/0022-3719/18/10/006
Abstract
The authors report optical detection of magnetic resonance (ODMR) of the AsGa antisite in a luminescence band at approximately 0.7 eV in n-type GaAs. Shallow donor to deep AsGa donor radiative recombination is proposed to interpret the results.Keywords
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