Identification of satellite peaks in injection luminescence from gallium arsenide transistors
- 30 June 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (6) , 625-632
- https://doi.org/10.1016/0038-1101(66)90006-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- INJECTION LUMINESCENCE IN GaAs TRANSISTORSApplied Physics Letters, 1965
- Injection Luminescence in GaAs by Direct Hole-Electron RecombinationPhysical Review B, 1965
- Common Occurrence of Artifacts or ``Ghost'' Peaks in Semiconductor Injection Electroluminescence SpectraJournal of Applied Physics, 1964
- Electroluminescent Gallium Arsenide Diodes with Negative ResistanceJournal of Applied Physics, 1964
- Refractive Index of GaAsJournal of Applied Physics, 1964
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954