Effect of encapsulation temperature on Si:P δ-doped layers
- 22 November 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (21) , 4953-4955
- https://doi.org/10.1063/1.1827940
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Atomically Precise Placement of Single Dopants in SiPhysical Review Letters, 2003
- Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computerApplied Physics Letters, 2002
- Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursorsApplied Physics Letters, 2002
- Towards the fabrication of phosphorus qubits for a silicon quantum computerPhysical Review B, 2001
- Thermal reactions of phosphine with Si(100): a combined photoemission and scanning-tunneling-microscopy studySurface Science, 1999
- Prospects for atomically ordered device structures based on STM lithographySolid-State Electronics, 1998
- Segregation and diffusion on semiconductor surfacesPhysical Review B, 1996
- Molecular Beam EpitaxyPublished by Springer Nature ,1996
- Semiconductor molecular-beam epitaxy at low temperaturesJournal of Applied Physics, 1995
- Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscopeApplied Physics Letters, 1994