Segregation and diffusion on semiconductor surfaces
- 15 May 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (20) , 13551-13558
- https://doi.org/10.1103/physrevb.53.13551
Abstract
The surface segregation of phosphorus, antimony, and boron in Si molecular-beam epitaxy is investigated experimentally at low temperatures. Rate and temperature dependent measurements are explained by a segregation model, which connects surface segregation with surface diffusion. The model is found to explain quantitatively many available data of segregation on different semiconductor surfaces, explicitly: Si, Ge, and GaAs. © 1996 The American Physical Society.Keywords
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