Comparison of P and Sb as n-dopants for Si molecular beam epitaxy
- 15 July 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (2) , 937-940
- https://doi.org/10.1063/1.360286
Abstract
The incorporation properties segregation, activation, and desorption in Si molecular beam epitaxy of phosphorus (P) are investigated experimentally in comparison to antimony (Sb) over a temperature range from 300 to 900 °C with Secondary Ion Mass Spectroscopy and electrochemical Capacitance/Voltage measurements. P exhibits superior properties over the full temperature range.This publication has 19 references indexed in Scilit:
- Post-growth annealing of low temperature-grown Sb-doped Si molecular beam epitaxial filmsApplied Physics Letters, 1992
- An Overview of Doping Strategies in Si:MBEMRS Proceedings, 1991
- The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE)Applied Physics A, 1987
- Coevaporation phosphorus doping in Si grown by molecular beam epitaxyApplied Physics A, 1986
- The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studiesSurface Science, 1986
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Tin phosphide as a phosphorus beam source for molecular beam epitaxyApplied Physics Letters, 1984
- High quality InP grown by molecular beam epitaxyApplied Physics Letters, 1982
- n‐Type Doping Techniques in Silicon Molecular Beam Epitaxy by Simultaneous Arsenic Ion Implantation and by Antimony EvaporationJournal of the Electrochemical Society, 1979
- Adsorption of Gases on a Silicon SurfaceThe Journal of Physical Chemistry, 1956