Coevaporation phosphorus doping in Si grown by molecular beam epitaxy
- 1 November 1986
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 41 (3) , 233-235
- https://doi.org/10.1007/bf00616844
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Potential‐Enhanced Doping of Si Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1985
- Potential enhanced Sb and As doping in Si molecular beam epitaxyApplied Physics Letters, 1985
- Tin phosphide as a phosphorus beam source for molecular beam epitaxyApplied Physics Letters, 1984
- Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxyJournal of Applied Physics, 1981