Photothermal electrostatics of the Pd-polyvinylidene fluoride photopyroelectric hydrogen gas sensor
- 15 October 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (8) , 4496-4504
- https://doi.org/10.1063/1.349084
Abstract
A detailed photothermal electrostatic consideration of the Pd‐pyroelectric junction H2 sensor is presented. Experimental evidence is in agreement with the fundamental features of the theory, which supports two possible mechanisms of ac‐mode device operation: pyroelectric coefficient dependence on the hydrogenic dipole‐induced charge density at the Pd‐insulator polyvinylidene fluoride interface, and thermal‐wave modulation of the hydrogen‐concentration‐dependent Pd work function. The dominant operating mechanism is found to depend on the experimental conditions. The concept of image dipole thermostatistical vibration and libration in the pyroelectric matrix is further successfully used to explain the temperature dependence of the photopyroelectric signal in support of the former above‐mentioned mechanism.This publication has 14 references indexed in Scilit:
- Pyroelectric sensors for the photothermal analysis of condensed phasesFerroelectrics, 1991
- Surface hydrogen–palladium studies using a new photopyroelectric detectorJournal of Vacuum Science & Technology A, 1990
- Photopyroelectric (P2E) sensor for trace hydrogen gas detectionSensors and Actuators B: Chemical, 1990
- Operating characteristics and comparison of photopyroelectric and piezoelectric sensors for trace hydrogen gas detection. I. Development of a new photopyroelectric sensorJournal of Applied Physics, 1989
- Theory of photopyroelectric spectroscopy of solidsJournal of Applied Physics, 1985
- Hydrogen sensitive mos-structuresSensors and Actuators, 1981
- Relation Between an Atomic Electronegativity Scale and the Work FunctionIBM Journal of Research and Development, 1978
- Chemical reactions on palladium surfaces studied with Pd-MOS structuresSurface Science, 1977
- A hydrogen-sensitive Pd-gate MOS transistorJournal of Applied Physics, 1975
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975