Use of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation
- 20 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (3) , 312-314
- https://doi.org/10.1063/1.107922
Abstract
Inspection of complementary metal-oxide-semiconductor circuits by electron-beam charging is demonstrated. Isolation of the gate electrodes used in the actual circuits is verified. The inspection is done entirely without contact, without removing wafers from the clean room, and prior to metal and interlevel dielectric deposition.Keywords
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