Reliability study of InAs/InGaAs quantum dot diode lasers
- 24 November 2005
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 41 (24) , 1330-1331
- https://doi.org/10.1049/el:20053336
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substratesTechnical Physics, 2003
- InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiencyElectronics Letters, 2002
- The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structuresIEEE Journal of Quantum Electronics, 2000
- Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrateIEEE Photonics Technology Letters, 1999