InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiency
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- 12 September 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 38 (19) , 1104-1106
- https://doi.org/10.1049/el:20020793
Abstract
Multiple layers (up to 10) of InAs/InGaAs/GaAs quantum dots considerably enhance the optical gain of quantum dot lasers emitting around 1.3 µm. A differential efficiency as high as 88% has been achieved in these lasers. An emission wavelength of 1.28 µm, threshold current density of 147 A/cm2, differential efficiency of 80%, and characteristic temperature of 150 K have been realised simultaneously in one device.Keywords
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