The differential efficiency of quantum-well lasers
- 1 April 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 3 (2) , 491-498
- https://doi.org/10.1109/2944.605699
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- GaInP-(Al/sub y/Ga/sub 1-y/)InP 670 nm quantum-well lasers for high-temperature operationIEEE Journal of Quantum Electronics, 1995
- Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodesIEEE Journal of Quantum Electronics, 1994
- 610-nm band AlGaInP single quantum well laser diodeIEEE Photonics Technology Letters, 1994
- Nonequilibrium effects in quantum well lasersApplied Physics Letters, 1992
- Estimation of carrier capture time of quantum-well lasers by spontaneous emission spectraApplied Physics Letters, 1992
- Carrier heating in AlGaAs single quantum well laser diodesApplied Physics Letters, 1991
- Measurement and calculation of spontaneous recombination current and optical gain in GaAs-AlGaAs quantum-well structuresJournal of Applied Physics, 1991
- Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasersIEEE Journal of Quantum Electronics, 1989
- Facet oxide formation and degradation of GaAs lasersJournal of Applied Physics, 1979
- GaAs double heterostructure lasing behavior along the junction planeJournal of Applied Physics, 1975